BC857BV dual pnp plastic-encapsulated transistors elektronische bauelemente 21-jul-2011 rev. a page 1 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. rohs compliant product a suffix of -c specifies halogen & lead-free features epitaxial die construction complementary npn types available (bc847bv) ultra-small surface mount package marking k5v package information package mpq leader size sot-563 3k 7 inch maximum ratings (t a = 25 c unless otherwise specified) parameter symbol ratings unit collector-base voltage v cbo -50 v collector-emitter voltage v ceo -45 v emitter-base voltage v ebo -5 v collector current C continuous i c -100 ma collector power dissipation p c 0.15 w thermal resistance. junction to ambient air r ja 833 c / w junction & storage temperature t j , t stg 150, -55~150 c electrical characteristics (t a = 25 c unless otherwise specified) parameter symbol min. typ. max. unit test conditions collector-base breakdown voltage v (br)cbo -50 - - v i c = -10 a, i e =0 collector-emitter breakdown voltage v (br)ceo -45 - - v i c = -10ma, i b =0 emitter-base breakdown voltage v (br)ebo -5 - - v i e = -1 a, i c =0 collector cut-off current i cbo - - -15 na v cb = -30v, i e =0 dc current gain h fe 220 - 475 v ce = -5v, i c = -2ma collector-emitter saturation voltage v ce(sat)1 - - -0.1 v i c = -10ma, i b = -0.5ma v ce(sat)2 - - -0.4 v i c = -100ma, i b = -5ma base-emitter saturation voltage v be(sat)1 - -0.7 - v i c = -10ma, i b = -0.5ma v be(sat)2 - -0.9 - v i c = -100ma, i b = -5ma base-emitter voltage v be(1) -0.6 - -0.75 v v ce = -5v,i c = -2ma v be(2) - - -0.82 v v ce = -5v,i c = -10ma transition frequency f t 100 - - mhz v ce = -5v, i c = -10ma, f=100mhz collector output capacitance c ob - - 4.5 pf v cb = -10v, i e =0, f=1mhz noise figure nf - - 10 db v ce = -5v, ic= -0.2ma, f=1khz, rs=2k ,bw=200hz sot-563 ref. millimeter ref. millimeter min. max. min. max. a 1.50 1.70 f 0.09 0.16 b 1.50 1.70 g 0.45 0.55 c 0.525 0.600 h 0.17 0.27 d 1.10 1.30 j 0.10 0.30 e 0.05 ref. e f j b c d g a h
BC857BV dual pnp plastic-encapsulated transistors elektronische bauelemente 21-jul-2011 rev. a page 2 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. typical characteristics
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